The Impact of Metal Gate Recess Profile on Transistor ...

由 W Tu 著作 · 2022 — The metal gate (MG) height composed of complicated work function metal (WFM) films is crucial to the device and yield performance at the FinFET Technology.

由 RM Luna-Sánchez 著作 · 2006 · 被引用 1 次 — The TiN-gate CMOS FinFET technologies for high-performance connected-double-gate 3-terminal (3T) and flexible threshold.

When CMOS IC developed from the 90-nm to 65-nm node, the scaling did not improve the device performance: it only increased the device density. The main reason ...

由 H Nam 著作 · 2018 · 被引用 15 次 — We found that the extended gate area effect in FinFETs extensively varied depending on the gate materials used. In order to substantially ...

由 RS Rathore 著作 · 2017 · 被引用 19 次 — The orientation and work function of each grain is entirely random thus metal gate electrodes suffer from the work function variability (WFV). Recently, for ...

In this paper, bulk FinFET with high-κ/metal gate stack, such as HfO 2 /TiN, and bulk FinFET with SiO 2 /poly-Si gate stack were analyzed and compared by 3D ...

由 R Bao 著作 · 2015 · 被引用 6 次 — In this paper, we develop a multiplicative model to simulate the tungsten (W) film resistivity and gate resistance for replacement metal gate (RMG) with W ...

2023年4月13日 — In logic devices such as FinFETs (field-effect transistors), metal gate parasitic capacitance can negatively impact electrical performance.

An N work function metal for a gate stack of a field effect transistor (FinFET) and method of forming the same are provided. An embodiment FinFET includes a ...